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| HZC Series Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1436A (Z) Rev.1 Jan. 2002 Features * These diodes are delivered taped. * Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HZC Series Laser Mark Let to Mark Code Package Code UFP Pin Arrangement Cathode mark Mark 1 51 2 1. Cathode 2. Anode HZC Series Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature Note: 1. See Fig2. Symbol Pd * Tj Tstg 1 Value 150 150 -55 to +150 Unit mW C C Electrical Characteristics (Ta = 25C) Zener voltage VZ (V) * Type HZC2.0 HZC2.2 HZC2.4 HZC2.7 HZC3.0 HZC3.3 HZC3.6 HZC3.9 HZC4.3 HZC4.7 HZC5.1 HZC5.6 HZC6.2 HZC6.8 HZC7.5 HZC8.2 HZC9.1 HZC10 HZC11 Min 1.90 2.10 2.30 2.50 2.80 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 7.76 8.56 9.45 10.44 1 Reverse current Test Condition Dynamic resistance Test Condition ESD-Capability * -- (kV) * Min 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 2 2 IR (A) Max 120.0 120.0 120.0 120.0 50.0 20.0 10.0 10.0 10.0 10.0 5.0 5.0 2.0 1.0 1.0 0.5 0.5 0.5 0.5 Test Condition rd () Max 2.20 2.40 2.60 2.90 3.20 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 8.64 9.55 10.55 11.56 IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 VR (V) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 Max 100 100 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 IZ (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec Rev.1, Jan. 2002, page 2 of 6 HZC Series Zener voltage VZ (V) * Type HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 HZC24 HZC27 HZC30 HZC33 HZC36 Min 11.42 12.47 13.84 15.37 16.94 18.86 20.88 22.93 25.10 28.00 31.00 34.00 1 Reverse current Test Condition Dynamic resistance Test Condition ESD-Capability * -- (kV) * Min 30 30 30 30 30 30 30 30 30 30 25 20 2 2 IR (A) Max 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Test Condition rd () Max 12.60 13.96 15.52 17.09 19.03 21.08 23.17 25.57 28.90 32.00 35.00 38.00 IZ (mA) 5 5 5 5 5 5 5 5 2 2 2 2 VR (V) 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 Max 35 35 40 40 45 50 55 60 70 80 80 90 IZ (mA) 5 5 5 5 5 5 5 5 2 2 2 2 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec Mark Code Type HZC2.0 HZC2.2 HZC2.4 HZC2.7 HZC3.0 HZC3.3 HZC3.6 HZC3.9 HZC4.3 HZC4.7 HZC5.1 Note: Mark No. 20 22 24 27 30 33 36 39 43 47 51 1. HZC10 To HZC36 has s, on the right of Laser Mark. Type HZC5.6 HZC6.2 HZC6.8 HZC7.5 HZC8.2 HZC9.1 HZC10 HZC11 HZC12 HZC13 Mark No. 56 62 68 75 82 91 10 * 11 * 12 * 13 * Type HZC15 HZC16 HZC18 HZC20 HZC22 HZC24 HZC27 HZC30 HZC33 HZC36 Mark No. 15 * 16 * 18 * 20 * 22 * 24 * 27 * 30 * 33 * 36 * Rev.1, Jan. 2002, page 3 of 6 HZC Series Main Characteristic HZC2.4 HZC3.0 HZC3.6 HZC4.3 HZC5.1 HZC6.2 HZC7.5 HZC8.2 HZC9.1 HZC10 HZC11 HZC13 HZC16 10 8 Zener Current IZ (mA) 6 HZC2.0 HZC18 HZC15 HZC20 HZC22 HZC30 HZC24 HZC33 4 0 0 4 HZC6.8 2 8 HZC12 12 16 20 24 HZC27 28 32 36 HZC36 40 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage Zener Voltage Temperature Coefficient Z (mV/C) Zener Voltage Temperature Coefficient Z (%/C) 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 0 250 Polyimide board 20hx15wx0.8t %/C mV/C 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 Power Dissipation Pd (mW) 200 3.0 1.5 150 1.5 unit: mm 100 50 5 10 15 20 25 30 35 40 45 Zener Voltage VZ (V) 0 0 50 100 150 Ambient Temperature Ta (C) Fig.2 Power Dissipation vs. Ambient Temperature Fig.2 Temperature Coefficient vs. Zener voltage Rev.1, Jan. 2002, page 4 of 6 0.8 200 HZC Series Package Dimensions As of July, 2001 Unit: mm 1.2 0.10 1.6 0.10 0.13 0.05 0.6 0.10 0.3 0.05 0.8 0.10 Hitachi Code JEDEC JEITA Mass (reference value) UFP -- Conforms 0.0016 g Rev.1, Jan. 2002, page 5 of 6 HZC Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.1, Jan. 2002, page 6 of 6 |
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